40 citations · 174 across the 11 of their papers we have counts for
11 papers
Organic Electrochemical Transistor Arrays with Integrated Lipid-Sealed Femtolitre Chambers for Simultaneous Electrical and Optical Detection of Membrane Protein Activity
S. Kojima, S. Rawat, M. Sanchez Miranda +4
We report a scalable method for fabricating arrays of fifty-two ion-sensitive PEDOT:PSS organic electrochemical transistors (OECTs) on glass coverslips, each incorporating an integ…
Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion
J. G. Gluschke, J. Seidl, R. W. Lyttleton +9
A central endeavour in bioelectronics is the development of logic elements to transduce and process ionic to electronic signals. Motivated by this challenge, we report fully monoli…
Post-growth shaping and transport anisotropy in 2D InAs nanofins
J. Seidl, J. G. Gluschke, X. Yuan +4
We report on the post-growth shaping of free-standing 2D InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabr…
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
J. G. Gluschke, J. Seidl, H. H. Tan +3
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characteri…
A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications
J. G. Gluschke, F. Richter, A. P. Micolich
We report on a parylene chemical vapor deposition system custom designed for producing ultra-thin parylene films (5-100 nm thickness) for use as an electrical insulator in nanoscal…
Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy
J. Seidl, J. G. Gluschke, X. Yuan +6
We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can…
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
J. G. Gluschke, J. Seidl, A. M. Burke +7
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trenc…
p-GaAs nanowire MESFETs with near-thermal limit gating
A. R. Ullah, F. Meyer, J. G. Gluschke +5
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconduc…
Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors
J. G. Gluschke, J. Seidl, R. W. Lyttleton +5
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of pary…
Towards low-dimensional hole systems in Be-doped GaAs nanowires
A. R. Ullah, J. G. Gluschke, P. Krogstrup +3
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs n…
InAs nanowire transistors with multiple, independent wrap-gate segments
A. M. Burke, D. J. Carrad, J. G. Gluschke +5
We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-ga…