11 citations · 46 across the 35 of their papers we have counts for
6 papers · 1 filter
Autonomous Reliability Qualification of GaO-based diode sensors via Safe Active Learning
Davi Febba, William A. Callahan, Anna Sacchi +1
Ultra-wide bandgap (UWBG) GaO is a promising semiconductor for high-power and high-temperature electronics. Reliable qualification of these devices under extreme operating…
Low Leakage Ferroelectric Heteroepitaxial AlScN Films on GaN
Keisuke Yazawa, Charles Evans, Elizabeth Dickey +3
Wurtzite (Al,Sc)N ferroelectrics are attractive for microelectronics applications due to their chemical and epitaxial structural compatibility with wurtzite semiconductors such as…
Autonomous sputter synthesis of thin film nitrides with composition controlled by Bayesian optimization of optical plasma emission
Davi M. Febba, Kevin R. Talley, Kendal Johnson +5
Autonomous experimentation has emerged as an efficient approach to accelerate the pace of materials discovery. Although instruments for autonomous synthesis have become popular in…
Ultrathin Stable Ohmic Contacts for High-Temperature Operation of -GaO Devices
William A. Callahan, Edwin Supple, David Ginley +4
Beta gallium oxide (-GaO) shows significant promise in the high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization la…
Growth and Characterization of Homoepitaxial -GaO Layers
M. Brooks Tellekamp, Karen N. Heinselman, Steve Harvey +2
-GaO is a next-generation ultra wide bandgap semiconductor (E = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generatio…
High-throughput fabrication and semi-automated characterization of oxide thin film transistors
Yanbing Han, Sage Bauers, Qun Zhang +1
High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradien…