635 citations · 2.3k across the 32 of their papers we have counts for
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Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Joshua D. Caldwell, Travis J. Anderson, James C. Culbertson +11
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of…
Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged…
Graphene formation on SiC substrates
Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco +7
Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial…
Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the f…
Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco +11
We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the…