150 citations · 258 across the 16 of their papers we have counts for
Showing 2017Show all
3 papers · 1 filter
cs.AR2017★ 28 cited
Understanding and Improving the Latency of DRAM-Based Memory Systems
Kevin K. Chang
Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to…
cs.AR2017★ 150 cited
Improving DRAM Performance by Parallelizing Refreshes with Accesses
Kevin K. Chang, Donghyuk Lee, Zeshan Chishti +4
Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR DRAM refreshes cells at the rank level. This degrades performance significantly beca…
cs.AR2017★ 56 cited
Understanding Reduced-Voltage Operation in Modern DRAM Chips: Characterization, Analysis, and Mechanisms
Kevin K. Chang, Abdullah Giray Yağlıkçı, Saugata Ghose +7
The energy consumption of DRAM is a critical concern in modern computing systems. Improvements in manufacturing process technology have allowed DRAM vendors to lower the DRAM suppl…