Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS${}_2$ van der Waals Heterostructures

Riccardo Pisoni, Yongjin Lee, Hiske Overweg +7

We have realized encapsulated trilayer MoS${}_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm${}^2$/(V s) at a density of 3 $…