activity
20152021
most citedExcited states in bilayer graphene quantum dots

95 citations · 177 across the 4 of their papers we have counts for

collaborators
Showing 2018 · cond-mat.mes-hallShow all

6 papers · 2 filters

cond-mat.mes-hall2018

Interactions and magnetotransport through spin-valley coupled Landau levels in monolayer MoS

Riccardo Pisoni, Andor Kormányos, Matthew Brooks +12

The strong spin-orbit coupling and the broken inversion symmetry in monolayer transition metal dichalcogenides (TMDs) results in spin-valley coupled band structures. Such a band st…

cond-mat.mes-hall2018

Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure

Yongjin Lee, Riccardo Pisoni, Hiske Overweg +10

In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optic…

cond-mat.mes-hall2018

Coupled quantum dots in bilayer graphene

Marius Eich, Riccardo Pisoni, Alessia Pally +8

Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induc…

cond-mat.mes-hall2018

Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots

Marius Eich, František Herman, Riccardo Pisoni +9

In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quan…

cond-mat.mes-hall2018

Transport through a network of topological states in twisted bilayer graphene

Peter Rickhaus, John Wallbank, Sergey Slizovskiy +10

We explore a network of electronic quantum valley Hall (QVH) states in the moiré crystal of minimally twisted bilayer graphene. In our transport measurements we observe Fabry-Pérot…

cond-mat.mes-hall2018

Gate-Tunable Quantum Dot in a High Quality Single Layer MoS Van der Waals Heterostructure

Riccardo Pisoni, Zijin Lei, Patrick Back +7

We have fabricated an encapsulated monolayer MoS device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility…