activity
20122023
most citedSpin-valve Effect in NiFe/MoS2/NiFe Junctions

168 citations · 1.7k across the 62 of their papers we have counts for

collaborators
Showing 2014Show all

7 papers · 1 filter

cond-mat.mtrl-sci2014

Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films

Yanwen Liu, Cheng Zhang, Xiang Yuan +9

Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position…

cond-mat.mes-hall2014

Phenomenology of Andreev reflection from first-principles transport theory

Awadhesh Narayan, Ivan Rungger, Stefano Sanvito

We study Andreev reflection in normal metal-superconductor junctions by using an extended Blonder-Tinkham-Klapwijk model combined with transport calculations based on density funct…

cond-mat.mes-hall2014★ 61 cited

Topological tuning in three-dimensional Dirac semimetals

Awadhesh Narayan, Domenico Di Sante, Silvia Picozzi +1

We study with first-principles methods the interplay between bulk and surface Dirac fermions in three dimensional Dirac semimetals. By combining density functional theory with the…

cond-mat.mes-hall2014★ 23 cited

Proximity induced topological state in graphene

Igor Popov, Mauro Mantega, Awadhesh Narayan +1

The appearance of topologically protected states at the surface of an ordinary insulator is a rare occurrence and to date only a handful of materials are known for having this prop…

cond-mat.mes-hall2014★ 8 cited

Single atom anisotropic magnetoresistance on a topological insulator surface

Awadhesh Narayan, Ivan Rungger, Stefano Sanvito

We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface elec…

cond-mat.mes-hall2014★ 109 cited

Efficient spin injection and giant magnetoresistance in Fe/MoS/Fe junctions

Kapildeb Dolui, Awadhesh Narayan, Ivan Rungger +1

We demonstrate giant magnetoresistance in Fe/MoS/Fe junctions by means of \textit{ab-initio} transport calculations. We show that junctions incorporating either a mono- or a bi…