294 citations · 1.7k across the 19 of their papers we have counts for
15 papers · 1 filter
A scalable non-superconducting tunnel junction technology
Juho Luomahaara, Kristupas Razas, Omid Sharifi Sedeh +15
Tunnel junctions are one of the key elements of chip-scale microsystems serving various technologies from classical microelectronics to quantum information. Aluminium and its oxide…
Microkelvin electronics on a pulse-tube cryostat with a gate Coulomb blockade thermometer
Mohammad Samani, Christian P. Scheller, Nikolai Yurttagül +8
Access to lower temperatures has consistently enabled scientific breakthroughs. Pushing the limits of \emph{on-chip} temperatures deep into the microkelvin regime would open the do…
Progress in cooling nanoelectronic devices to ultra-low temperatures
A. T. Jones, C. P. Scheller, J. R. Prance +3
Here we review recent progress in cooling micro/nanoelectronic devices significantly below 10 mK. A number of groups worldwide are working to produce sub-millikelvin on-chip electr…
Operating Nanobeams in a Quantum Fluid
D. I. Bradley, R. George, A. M. Guenault +12
Microelectromechanical (MEMS) and nanoelectromechanical systems (NEMS) are ideal candidates for exploring quantum fluids since they can be manufactured reproducibly, cover the freq…
Edge currents shunt the insulating bulk in gapped graphene
M. J. Zhu, A. V. Kretinin, M. D. Thompson +13
An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these g…
On-chip magnetic cooling of a nanoelectronic device
D. I. Bradley, A. M. Guénault, D. Gunnarsson +8
We demonstrate significant cooling of electrons in a nanostructure below 10 mK by demagnetisation of thin-film copper on a silicon chip. Our approach overcomes the typical bottlene…
Nanoelectronic thermometers optimised for sub-10 millikelvin operation
J. R. Prance, D. I. Bradley, R. E. George +8
We report the cooling of electrons in nanoelectronic Coulomb blockade thermometers below 4 mK. Above 7 mK the devices are in good thermal contact with the environment, well isolate…
Identifying single electron charge sensor events using wavelet edge detection
J. R. Prance, B. J. Van Bael, C. B. Simmons +5
The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for hi…
Quantum oscillations of the critical current and high-field superconducting proximity in ballistic graphene
M. Ben Shalom, M. J. Zhu, V. I. Fal'ko +8
Graphene-based Josephson junctions provide a novel platform for studying the proximity effect due to graphene's unique electronic spectrum and the possibility to tune junction prop…
Two-axis control of a singlet-triplet qubit with an integrated micromagnet
Xian Wu, D. R. Ward, J. R. Prance +9
The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double quantum dot with an integrated micromagnet in which the qubit basis stat…
Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
Dohun Kim, Zhan Shi, C. B. Simmons +9
The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have…
Fast coherent manipulation of three-electron states in a double quantum dot
Zhan Shi, C. B. Simmons, Daniel R. Ward +9
A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of el…
Coherent Quantum Oscillations in a Silicon Charge Qubit
Zhan Shi, C. B. Simmons, Daniel. R. Ward +10
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomoge…
Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot
J. R. Prance, Zhan Shi, C. B. Simmons +8
We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade…
Tunable spin-selective loading of a silicon spin qubit
C. B. Simmons, J. R. Prance, B. J. Van Bael +8
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attr…