147 citations · 539 across the 14 of their papers we have counts for
4 papers · 1 filter
Effects of Low Temperature Annealing on the Transport Properties of Zinc Tin Nitride
Angela N. Fioretti, Eric S. Toberer, Andriy Zakutayev +1
ZnSnN2 has recently garnered increasing interest as a potential solar absorber material due to its direct bandgap that is predicted to be tunable from 1.0-2.1 eV based on cation di…
III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers
Adele C. Tamboli, Maikel F. A. M. van Hest, Myles A. Steiner +5
We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent…
Solar energy conversion properties and defect physics of ZnSiP
Aaron D. Martinez, Emily L. Warren, Prashun Gorai +12
Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoe…
Combinatorial Insights into Doping Control and Transport Properties of Zinc Tin Nitride
Angela N. Fioretti, Andriy Zakutayev, Helio Moutinho +6
ZnSnN2 is an Earth-abundant analog to the III-Nitrides with potential as a solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven bandgap tunability.…