147 citations · 539 across the 14 of their papers we have counts for
14 papers
Composition dependent electrochemical properties of earth-abundant ternary nitride anodes
M Brooks Tellekamp, Anna Osella, Karen N Heinselman +2
Growing energy storage demands on lithium-ion batteries necessitate exploration of new electrochemical materials as next-generation battery electrode materials. In this work, we in…
Combinatorial synthesis of cation-disordered manganese tin nitride MnSnN thin films with magnetic and semiconducting properties
Christopher L. Rom, Rebecca W. Smaha, Celeste L. Melamed +11
Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational…
Efficient light-trapping in ultrathin GaAs solar cells using quasi-random photonic crystals
Jeronimo Buencuerpo, Theresa E. Saenz, Mark Steger +5
Ultrathin solar cells reduce material usage and allow the use of lower-quality materials thanks to their one order of magnitude smaller thickness than their conventional counterpar…
Boron phosphide films by reactive sputtering: Searching for a p-type transparent conductor
Andrea Crovetto, Jesse M. Adamczyk, Rekha R. Schnepf +7
With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previo…
Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell
Marius H. Zehender, Simon. A. Svatek, Myles A. Steiner +6
Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing e…
Transition metal impurities in Silicon: Computational search for a semiconductor qubit
Cheng-Wei Lee, Meenakshi Singh, Adele Tamboli +1
Semiconductors offer a promising platform for physical implementation of qubits, but their broad adoption is presently hindered by limited scalability and/or very low operating tem…
Ternary Nitride Materials: Fundamentals and Emerging Device Applications
Ann L. Greenaway, Celeste L. Melamed, M. Brooks Tellekamp +4
Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diversity of chemistries and structures make them appealing for a variety of a…
Engineering the reciprocal space for ultrathin GaAs solar cells
Jeronimo Buencuerpo, Jose M. Llorens, Jose M. Ripalda +2
III-V solar cells dominate the high efficiency charts, but with significantly higher cost than other solar cells. Ultrathin III-V solar cells can exhibit lower production costs and…
Ternary Nitride Semiconductors in the Rocksalt Crystal Structure
Sage R. Bauers, Aaron Holder, Wenhao Sun +10
Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optoelectronic devices. In contrast, rocksalt-based nitrides are known for their metallic…
Understanding and Control of Bipolar Doping in Copper Nitride
Angela N Fioretti, Craig P Schwartz, John Vinson +10
Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semicon…
Effects of Low Temperature Annealing on the Transport Properties of Zinc Tin Nitride
Angela N. Fioretti, Eric S. Toberer, Andriy Zakutayev +1
ZnSnN2 has recently garnered increasing interest as a potential solar absorber material due to its direct bandgap that is predicted to be tunable from 1.0-2.1 eV based on cation di…
III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers
Adele C. Tamboli, Maikel F. A. M. van Hest, Myles A. Steiner +5
We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent…
Solar energy conversion properties and defect physics of ZnSiP
Aaron D. Martinez, Emily L. Warren, Prashun Gorai +12
Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoe…
Combinatorial Insights into Doping Control and Transport Properties of Zinc Tin Nitride
Angela N. Fioretti, Andriy Zakutayev, Helio Moutinho +6
ZnSnN2 is an Earth-abundant analog to the III-Nitrides with potential as a solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven bandgap tunability.…