198 citations · 457 across the 9 of their papers we have counts for
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Wafer bonding solution to epitaxial graphene - silicon integration
Rui Dong, Zelei Guo, James Palmer +7
The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon,…
Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks
Renaud Puybaret, John Hankinson, James Palmer +5
Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbid…
A method to extract pure Raman spectrum of epitaxial graphene on SiC
Jan Kunc, Yike Hu, James Palmer +2
A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity…
Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors
Zelei Guo, Rui Dong, Partha Sarathi Chakraborty +9
The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene…