198 citations · 457 across the 9 of their papers we have counts for
9 papers
Epitaxial graphene on SiC: 2D sheets, selective growth and nanoribbons
Claire Berger, Dogukan Deniz, Jamey Gigliotti +9
Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of…
SU(4) symmetry breaking revealed by magneto-optical spectroscopy in epitaxial graphene
Liang Z. Tan, Milan Orlita, Marek Potemski +5
Refined infrared magnetotransmission experiments have been performed in magnetic fields B up to 35 T on a series of multilayer epitaxial graphene samples. Following the main optica…
Controlled epitaxial graphene growth within amorphous carbon corrals
James Palmer, Jan Kunc, Yike Hu +4
Structured growth of high quality graphene is necessary for technological development of carbon based electronics. Specifically, control of the bunching and placement of surface st…
Wafer bonding solution to epitaxial graphene - silicon integration
Rui Dong, Zelei Guo, James Palmer +7
The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon,…
Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks
Renaud Puybaret, John Hankinson, James Palmer +5
Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbid…
A method to extract pure Raman spectrum of epitaxial graphene on SiC
Jan Kunc, Yike Hu, James Palmer +2
A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity…
Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors
Zelei Guo, Rui Dong, Partha Sarathi Chakraborty +9
The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene…
A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene
J. Hicks, A. Tejeda, A. Taleb-Ibrahimi +10
A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either st…
Structured epitaxial graphene: growth and properties
Yike Hu, Ming Ruan, Zelei Guo +5
Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exc…