activity
20152025
most citedA bright and fast source of coherent single photons

566 citations · 1.7k across the 41 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

8 papers · 1 filter

cond-mat.mes-hall2023★ 7 cited

Flip-chip-based fast inductive parity readout of a planar superconducting island

M. Hinderling, S. C. ten Kate, D. Z. Haxell +8

Properties of superconducting devices depend sensitively on the parity (even or odd) of the quasiparticles they contain. Encoding quantum information in the parity degree of freedo…

cond-mat.mes-hall2023★ 14 cited

Spin-degeneracy breaking and parity transitions in three-terminal Josephson junctions

M. Coraiola, D. Z. Haxell, D. Sabonis +7

Harnessing spin and parity degrees of freedom is of fundamental importance for the realization of emergent quantum devices. Nanostructures embedded in superconductor--semiconductor…

cond-mat.mes-hall2022★ 11 cited

Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well

Zijin Lei, Erik Cheah, Filip Krizek +7

Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carr…

cond-mat.mes-hall2022★ 25 cited

Measurements of Phase Dynamics in Planar Josephson Junctions and SQUIDs

D. Z. Haxell, E. Cheah, F. Křížek +8

We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/…

cond-mat.mes-hall2021

High-quality Two-Dimensional Electron Gas in Undoped InSb Quantum Wells

Zijin Lei, Erik Cheah, Km Rubi +7

We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electro…

cond-mat.mes-hall2020★ 5 cited

Effect of electric current on optical orientation of electrons in AlGaAs/GaAs heterostructure

O. S. Ken, E. A. Zhukov, I. A. Akimov +10

The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation…