6 citations · 13 across the 4 of their papers we have counts for
8 papers · 1 filter
"Double-path" ferroelectrics and the sign of the piezoelectric response
Yubo Qi, Sebastian E. Reyes-Lillo, Karin M. Rabe
In this work, we propose a class of ferroelectrics (which we denote "double-path" ferroelectrics), characterized by two competing polarization switching paths for which the change…
Vibrational fingerprints of ferroelectric hafnia
Shiyu Fan, Sobhit Singh, Xianghan Xu +6
Hafnia (HfO2) is a promising material for emerging chip applications due to its high-k dielectric behaviour, suitability for negative capacitance heterostructures, scalable ferroel…
Polarization switching mechanism in HfO from first-principles lattice mode analysis
Yubo Qi, Sobhit Singh, Karin M. Rabe
In this work, we carry out first-principles calculations and lattice mode analysis to investigate the polarization switching mechanism in HfO. Because the stability of the pola…
Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects
Xianghan Xu, Fei-Ting Huang, Yubo Qi +6
HfO2, a simple binary oxide, holds ultra-scalable ferroelectricity integrable into silicon technology. Polar orthorhombic (Pbc21) form in ultra-thin-films ascribes as the plausible…
Phase Competition in HfO with Applied Electric Field from First Principles
Yubo Qi, Karin M. Rabe
In this work, the results of first-principles density-functional-theory calculations are used to construct the energy landscapes of HfO and its Y and Zr substituted derivatives…
Stabilization of competing ferroelectric phases of HfO under epitaxial strain
Yubo Qi, Sobhit Singh, Claudia Lau +6
Hafnia (HfO)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO ha…