activity
20152026
most citedKinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

232 citations · 637 across the 18 of their papers we have counts for

collaborators

18 papers

cond-mat.mtrl-sci2026

Atomic-scale theory of robust out-of-plane ferroelectricity in ultrathin films

Fengbo Yuan, Yujia Teng, Karin M. Rabe +1

Ferroelectricity in ultrathin films, characterized by robust switchable out-of-plane polarization, is key to next-generation nanoelectronics. Although the macroscopic theory of fer…

cond-mat.mtrl-sci2024★ 3 cited

Bridging experiment and theory of relaxor ferroelectrics at the atomic scale with multislice electron ptychography

Menglin Zhu, Michael Xu, Yubo Qi +7

Introducing structural and/or chemical heterogeneity into otherwise ordered crystals can dramatically alter material properties. Lead-based relaxor ferroelectrics are a prototypica…

cond-mat.mtrl-sci2022★ 5 cited

"Double-path" ferroelectrics and the sign of the piezoelectric response

Yubo Qi, Sebastian E. Reyes-Lillo, Karin M. Rabe

In this work, we propose a class of ferroelectrics (which we denote "double-path" ferroelectrics), characterized by two competing polarization switching paths for which the change…

cond-mat.mtrl-sci2022★ 1 cited

Vibrational fingerprints of ferroelectric hafnia

Shiyu Fan, Sobhit Singh, Xianghan Xu +6

Hafnia (HfO2) is a promising material for emerging chip applications due to its high-k dielectric behaviour, suitability for negative capacitance heterostructures, scalable ferroel…

cond-mat.mtrl-sci2021★ 6 cited

Polarization switching mechanism in HfO from first-principles lattice mode analysis

Yubo Qi, Sobhit Singh, Karin M. Rabe

In this work, we carry out first-principles calculations and lattice mode analysis to investigate the polarization switching mechanism in HfO. Because the stability of the pola…

cond-mat.mtrl-sci2021★ 9 cited

Electron-lattice coupling contributions to polarization switching in charge-order-induced ferroelectrics

Yubo Qi, Karin M. Rabe

We carry out first-principles density-functional-theory calculations to elucidate the polarization switching mechanism in charge-ordering-induced ferroelectrics based on the protot…

cond-mat.mtrl-sci2020★ 232 cited

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

Xianghan Xu, Fei-Ting Huang, Yubo Qi +6

HfO2, a simple binary oxide, holds ultra-scalable ferroelectricity integrable into silicon technology. Polar orthorhombic (Pbc21) form in ultra-thin-films ascribes as the plausible…

cond-mat.mtrl-sci2020★ 56 cited

Phase Competition in HfO with Applied Electric Field from First Principles

Yubo Qi, Karin M. Rabe

In this work, the results of first-principles density-functional-theory calculations are used to construct the energy landscapes of HfO and its Y and Zr substituted derivatives…

cond-mat.mtrl-sci2020★ 80 cited

Negative piezoelectricity in low--dimensional materials

Yubo Qi, Andrew M. Rappe

In this study, we investigate the underlying mechanisms of the negative piezoelectricity in low--dimensional materials by carrying out first--principles calculations. Two--dimensio…

cond-mat.mtrl-sci2020★ 101 cited

Stabilization of competing ferroelectric phases of HfO under epitaxial strain

Yubo Qi, Sobhit Singh, Claudia Lau +6

Hafnia (HfO)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO ha…

physics.app-ph2019★ 10 cited

Domain Wall Enabled Steep Slope Switching in MoS Transistors Towards Hysteresis-Free Operation

Jingfeng Song, Yubo Qi, Zhiyong Xiao +6

The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the c…

cond-mat.mtrl-sci2019★ 20 cited

Sr-induced dipole scatter in BST: Insights from MD simulations using a transferable bond valence-based interatomic potential

Robert B. Wexler, Yubo Qi, Andrew M. Rappe

In order to design next-generation ferroelectrics, a microscopic understanding of their macroscopic properties is critical. One means to achieving an atomistic description of ferro…

cond-mat.mtrl-sci2017★ 10 cited

Tribopolymer Formation Mechanism on the RuO(110) Surface

Jing Yang, Yubo Qi, Hyeong-Seok D. Kim +1

Tribopolymer formed on the contacts of microelectromechanical and nanoelectromechanical system (MEMS/NEMS) devices is a major concern hampering their practical use in information t…

cond-mat.mtrl-sci2017★ 32 cited

Ultra-fast electric field control of giant electrocaloric effect in ferroelectrics

Yubo Qi, Shi Liu, Aaron M. Lindenberg +1

There is a surge of interest in developing environmentally friendly cooling technology based on the solid--state electrocaloric effect (ECE). Here, we point out that negative ECE w…

cond-mat.mtrl-sci2016

Adsorption of Benzene on the RuO2(110) Surface

Hyeong-Seok D. Kim, Jing Yang, Yubo Qi +1

Hydrocarbon tribopolymer, a type of polymer formed due to friction between surfaces, is a major impediment to the development of micro- and nanoelectromechanical systems (MEMS/NEMS…

cond-mat.mtrl-sci2016★ 71 cited

Atomistic Description for Temperature-Driven Phase Transitions in BaTiO

Yubo Qi, Shi Liu, Ilya Grinberg +1

Barium titanate (BaTiO) is a prototypical ferroelectric perovskite that undergoes the rhombohedral-orthorhombic-tetragonal-cubic phase transitions as the temperature increases.…

cond-mat.mtrl-sci2015

Theoretical Modeling of Tribochemical Reaction on Pt and Au Contacts: Mechanical Load and Catalysis

Yubo Qi, Jing Yang, Andrew M. Rappe

Micro-electro-mechanical system and nano-electro-mechanical system (MEMS and NEMS) transistors are considered promising for size-reducing and power-maximizing electronic devices. H…

cond-mat.mtrl-sci2015★ 1 cited

Low Operation Voltage Ferroelectric Field-Effect Transistor Based on Polarization Rotation Effect

Yubo Qi, Andrew M. Rappe

The effect of polarization rotation on the performance of metal oxide semiconductor field-effect transistors was investigated with a Landau-Ginzburg-Devonshire theory based model.…