43 citations · 295 across the 33 of their papers we have counts for
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Ab initio calculation of energy levels for phosphorus donors in silicon
J. S. Smith, A. Budi, M. C. Per +5
The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we c…
Surface-gate-defined single-electron-transistor in a MoS bilayer
M. Javaid, Daniel W. Drumm, Salvy P. Russo +1
We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS bilayer. By combining density-functional theory and finite-element analysi…
Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide
Jamie M Booth, Daniel W. Drumm, Phil S. Casey +3
Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic m…