Surface-gate-defined single-electron-transistor in a MoS${}_2$ bilayer

Abstract

We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS${}_2$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS${}_2$ bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.

Cited by in corpus (1)

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