37 citations · 120 across the 14 of their papers we have counts for
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cond-mat.mes-hall2016★ 6 cited
Surface-gate-defined single-electron-transistor in a MoS bilayer
M. Javaid, Daniel W. Drumm, Salvy P. Russo +1
We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS bilayer. By combining density-functional theory and finite-element analysi…
cond-mat.mtrl-sci2016★ 9 cited
Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide
Jamie M Booth, Daniel W. Drumm, Phil S. Casey +3
Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic m…