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20132026
most citedDoes P-type Ohmic Contact Exist in WSe2-metal Interfaces?

211 citations · 1.5k across the 45 of their papers we have counts for

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Showing 2015Show all

5 papers · 1 filter

cond-mat.str-el2015★ 19 cited

Tunable giant exchange bias in single-phase rare earth-transition metal intermetallics YMn12-xFex with highly homogenous inter-sublattice exchange coupling

Yuanhua Xia, Rui Wu, Shunquan Liu +7

In this paper, we have found a family of intermetallic compounds YMn12-xFex (x = 6.6-8.8) showing a bulk form of tunable giant exchange bias effect which arises from global interac…

cond-mat.mtrl-sci2015★ 211 cited

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Yangyang Wang, Ruoxi Yang, Ruge Quhe +9

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative…

cond-mat.mes-hall2015★ 3 cited

Monolayer Phosphorene-Metal Interfaces

Yuanyuan Pan, Yangyang Wang, Meng Ye +9

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact p…

cond-mat.mtrl-sci2015★ 51 cited

Silicene Nanomesh

Feng Pan, Yangyang Wang, Kaili Jiang +8

Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal tha…

cond-mat.mes-hall2015★ 14 cited

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Hongxia Zhong, Zeyuan Ni, Yangyang Wang +8

Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal…