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physics.app-ph2023
Sub-5-nm Ultra-thin InO Transistors for High-Performance and Low-Power Electronic Applications
Linqiang Xu, Lianqiang Xu, Jun Lan +7
Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT in…
cond-mat.mtrl-sci2023
Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices
Linqiang Xu, Lianqiang Xu, Qiuhui Li +7
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET a…