74 citations · 91 across the 2 of their papers we have counts for
2 papers
physics.app-ph2022★ 17 cited
Development of SiGe Indentation Process Control for Gate-All-Around FET Technology Enablement
Daniel Schmidt, Aron Cepler, Curtis Durfee +7
Methodologies for characterization of the lateral indentation of silicon-germanium (SiGe) nanosheets using different non-destructive and in-line compatible metrology techniques are…
cond-mat.mtrl-sci2014★ 74 cited
Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
S. Liang, T. T. Zhang, P. Barate +19
We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). T…