most citedSimulation of quantum dead-layers in ferroelectric tunnel junctions

24 citations · 26 across the 2 of their papers we have counts for

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cond-mat.mtrl-sci2003★ 2 cited

1-D Simulation of the Electron Density Distribution in a Novel Nonvolatile Resistive Random Access Memory Device

Rene Meyer, Hermann Kohlstedt

The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involve…