139 citations · 217 across the 4 of their papers we have counts for
5 papers
From Processing to Functionality: Engineering Accessible Material States in Cu-Embedded SiO Memristive Devices
Tobias Gergs, Rouven Lamprecht, Sahitya Yarragolla +5
Resistive switching in oxide-based devices is widely governed by stochastic defect processes, yet a predictive link between fabrication conditions and functional behavior remains e…
On the physical origins of switching diversity in Cu-embedded SiO memristive devices
Sahitya Yarragolla, Rouven Lamprecht, Tobias Gergs +4
Resistive switching devices with sub-stoichiometric SiO and pancake-like Cu nanoparticles (Cu-PCs) exhibit distinct macroscopic current-voltage characteristics classified as ca…
Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline AlScN
Niklas Wolff, Georg Schoenweger, Isabel Streicher +10
Wurtzite-type AlScN solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickne…
Ferromagnetic resonance in epitaxial films: Effects of lattice strains and voltage control via ferroelectric substrate
N. A. Pertsev, H. Kohlstedt, R. Knoechel
The phenomenon of ferromagnetic resonance (FMR) provides fundamental information on the physics of magnetic materials and lies at the heart of a variety of signal processing microw…
Ultrathin epitaxial ferroelectric films grown on compressive substrates: Competition between the surface and strain effects
A. G. Zembilgotov, N. A. Pertsev, H. Kohlstedt +1
The mean-field Landau-type theory is used to analyze the polarization properties of epitaxial ferroelectric thin films grown on dissimilar cubic substrates, which induce biaxial co…