Jiawei Liu

collaborators

2 papers

cond-mat.mtrl-sci2026

Enhancement-Mode Vertical $β$ -Ga $_{2}$ O $_{3}$ U-Trench MOSFET with MOCVD Regrown n $^{+}$ Contact Layers and Nitrogen-Implanted Current Blocking Layer

Walid Amir, Jiawei Liu, Surajit Chakraborty +4

In this work, an implantation-free ohmic contact technology based on selectively MOCVD-regrown Si-doped n $^{+}$ layers is demonstrated for enhancement-mode vertical $β$ -Ga $_{2}$ O $_{3}$ U…

physics.app-ph2025

Neutron-Assisted Breakdown Enhancement in $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes

Saleh Ahmed Khan, Sudipto Saha, Ahmed Ibreljic +6

This study demonstrates a substantial enhancement of breakdown voltage in $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky diodes through an approach that combines fast neutron irradiation with controlle…

Enhancement-Mode Vertical β-Ga2​O3​ U-Trench MOSFET with MOCVD Regrown n+ Contact Layers and Nitrogen-Implanted Current Blocking Layer

Neutron-Assisted Breakdown Enhancement in I^2-Ga2​O3​ Schottky Diodes

Enhancement-Mode Vertical $β$ -Ga $_{2}$ O $_{3}$ U-Trench MOSFET with MOCVD Regrown n $^{+}$ Contact Layers and Nitrogen-Implanted Current Blocking Layer

Neutron-Assisted Breakdown Enhancement in $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes