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physics.app-ph2025
How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors
Theresia Knobloch, Quentin Smets, Anton E. O. Persson +23
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing c…
physics.app-ph2025
High-field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors
Haotian Su, Yuan-Mau Lee, Tara Peña +9
Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and hetero…