267 citations · 292 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2021★ 3 cited
Geometric interference in a high-mobility graphene annulus p-n junction device
Son T. Le, Albert F. Rigosi, Joseph A. Hagmann +3
The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance pat…
cond-mat.mes-hall2016★ 22 cited
Theory of Landau level mixing in heavily graded graphene p-n junctions
Samuel W LaGasse, Ji Ung Lee
We demonstrate the use of a quantum transport model to study heavily graded graphene p-n junctions in the quantum Hall regime. A combination of p-n interface roughness and delta fu…
cond-mat.mes-hall2014★ 267 cited
Ideal Graphene/Silicon Schottky Junction Diodes
Dhiraj Sinha, Ji Ung Lee
The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky…