435 citations · 1.2k across the 17 of their papers we have counts for
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In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V
Georg Schönweger, Niklas Wolff, Md Redwanul Islam +5
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution…
On the exceptional temperature stability of ferroelectric AlScN thin films
MD Redwanul Islam, Niklas Wolff, Mohammed Yassine +7
Through its dependence on low symmetry crystal phases, ferroelectricity is inherently a property tied to the lower temperature ranges of the phase diagram for a given material. Thi…
Strong enhancement of direct magnetoelectric effect in strained ferroelectric-ferromagnetic thin-film heterostructures
N. A. Pertsev, H. Kohlstedt, B. Dkhil
The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate i…
Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy
H. Kohlstedt, A. Petraru, M. Meier J. Denlinger +11
We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ra…
Depolarizing-Field Effect in Strained Nanoscale Ferroelectric Capacitors and Tunnel Junctions
N. A. Pertsev, H. Kohlstedt
The influence of depolarizing field on the magnitude and stability of a uniform polarization in ferroelectric capacitors and tunnel junctions is studied using a nonlinear thermodyn…
Theoretical current-voltage characteristics of ferroelectric tunnel junctions
H. Kohlstedt, N. A. Pertsev, J. Rodriguez Contreras +1
We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-v…