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cond-mat.str-el2001
Sharp increase of the effective mass near the critical density in a metallic 2D electron system
A. A. Shashkin, S. V. Kravchenko, V. T. Dolgopolov +1
We find that at intermediate temperatures, the metallic temperature dependence of the conductivity σ(T) of 2D electrons in silicon is described well by a recent interaction-based t…
cond-mat.str-el2001
Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"
S. V. Kravchenko, A. A. Shashkin, V. T. Dolgopolov
In a recent Letter (PRL 88, 196404 (2002)), the effective g-factor and the effective mass have been studied by Pudalov et al. in a dilute 2D electron system in silicon. The authors…