26 citations · 28 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2023★ 26 cited
Tuning the Interlayer Microstructure and Residual Stress of Buffer-Free Direct Bonding GaN/Si Heterostructures
Yan Zhou, Shi Zhou, Shun Wan +8
The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow G…
cond-mat.mtrl-sci2014★ 2 cited
High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)
Lingming Yang, Kausik Majumdar, Yuchen Du +8
In this paper, we report a novel chemical doping technique to reduce the contact resistance (Rc) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (name…