86 citations · 278 across the 5 of their papers we have counts for
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cond-mat.mes-hall2005★ 12 cited
Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
K. Lai, P. D. Ye, W. Pan +4
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) AlO as the gate dielectric are fabricated on the Si/SiGe hetero…
cond-mat.mes-hall2005★ 45 cited
Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
K. Lai, W. Pan, D. C. Tsui +3
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure wi…