activity
19952017
most citedStrongly Anisotropic Transport in Higher Two-Dimensional Landau Levels

391 citations · 5.5k across the 99 of their papers we have counts for

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Showing 1999 · cond-mat.mes-hallShow all

6 papers · 2 filters

cond-mat.mes-hall1999★ 27 cited

Effective Mass of the Four Flux Composite Fermion at

W. Pan, H. L. Stormer, D. C. Tsui +3

We have measured the effective mass () of the four flux composite fermion at Landau level filling factor (CF), using the activation energy gaps at the fractional…

cond-mat.mes-hall1999

Non-Kondo zero bias anomaly in electronic transport through an ultra-small Si quantum dot

L. P. Rokhinson, L. J. Guo, S. Y. Chou +1

We have studied low-temperature single electron transport through ultra-small Si quantum dots. We find that at low temperatures Coulomb blockade is partially lifted at certain gate…

cond-mat.mes-hall1999★ 312 cited

Exact Quantization of Even-Denominator Fractional Quantum Hall State at =5/2 Landau Level Filling Factor

W. Pan, J. -S. Xia, V. Shvarts +6

We report ultra-low temperature experiments on the obscure fractional quantum Hall effect (FQHE) at Landau level filling factor =5/2 in a very high mobility specimen of $μ=1.7 \…

cond-mat.mes-hall1999★ 38 cited

Phase diagram of the integer quantum Hall effect in p-type Germanium

M. Hilke, D. Shahar, S. H. Song +2

We experimentally study the phase diagram of the integer quantized Hall effect, as a function of density and magnetic field. We used a two dimensional hole system confined in a Ge/…

cond-mat.mes-hall1999★ 219 cited

Strongly Anisotropic Electronic Transport at Landau Level Filling Factor and Under Tilted Magnetic Field

W. Pan, R. R. Du, H. L. Stormer +4

We have investigated the influence of an increasing in-plane magnetic field on the states at half-filling of Landau levels ( = 11/2, 9/2, 7/2, and 5/2) of a two-dimensional elec…

cond-mat.mes-hall1999★ 28 cited

Mass enhancement of two-dimensional electrons in thin-oxide Si-MOSFET's

W. Pan, D. C. Tsui, B. L. Draper

We wish to report in this paper a study of the effective mass (m^*) in thin-oxide Si-metal-oxide-semiconductor field-effect-transistors, using the temperature dependence of the Shu…