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physics.app-ph2021
Multi-domain Polarization Switching in Hf0.5Zr0.5O2-Dielectric Stack: The Role of Dielectric Thickness
Atanu K. Saha, Mengwei Si, Peide D. Ye +1
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE)…
physics.app-ph2021
First Demonstration of Robust Tri-Gate \b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 °C
Hagyoul Bae, Tae Joon Park, Jinhyun Noh +4
Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time.…