P. Ye

activity

20042023

most citedChannel Length Scaling of MoS2 MOSFETs

815 citations · 3.1k across the 25 of their papers we have counts for

collaborators

Showing 2020 · physics.app-phShow all

2 papers · 2 filters

physics.app-ph2020

Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

Mengwei Si, Joseph Andler, Xiao Lyu +4

In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-curre…

physics.app-ph2020

$α$ -In $_{2}$ Se $_{3}$ based Ferroelectric-Semiconductor Metal Junction for Non-Volatile Memories

Atanu K. Saha, Mengwei Si, Peide Ye +1

In this work, we theoretically and experimentally investigate the working principle and non-volatile memory (NVM) functionality of 2D $α$ -In $_{2}$ Se $_{3}$ based ferroelectric-semicondu…

Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

α-In2​Se3​ based Ferroelectric-Semiconductor Metal Junction for Non-Volatile Memories

$α$ -In $_{2}$ Se $_{3}$ based Ferroelectric-Semiconductor Metal Junction for Non-Volatile Memories