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cs.ET2026★ 2 cited
Low-Power Control of Resistance Switching Transitions in First-Order Memristors
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto +1
In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control…
cs.ET2024
Reduction of Joule Losses in Memristive Switching Using Optimal Control
Valeriy A. Slipko, Yuriy V. Pershin
This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the str…