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Stark effect of shallow impurities in Si
G. D. J. Smit, S. Rogge, J. Caro +1
We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the l…
Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier
J. Caro, I. D. Vink, G. D. J. Smit +2
We observe a resonance in the conductance of silicon tunneling devices with a delta-doped barrier. The position of the resonance indicates that it arises from tunneling through the…
Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics
G. D. J. Smit, S. Rogge, J. Caro +1
We show that individual dopant atoms dominate the transport characteristics of nanometer sized devices, by investigating metal semiconductor diodes down to 15 nm diameter. Room tem…
Group theoretical analysis of double acceptors in a magnetic field: identification of the Si:B^+ ground state
G. D. J. Smit, S. Rogge, J. Caro +1
A boron impurity in silicon binding an extra hole is known to have only one bound state at an energy of just below 2 meV. The nature of the Si:B^+ ground state is however not well…
Gate-induced ionization of single dopant atoms
G. D. J. Smit, S. Rogge, J. Caro +1
Gate-induced wave function manipulation of a single dopant atom is a possible basis of atomic scale electronics. From this perspective, we analyzed the effect of a small nearby gat…