activity
20032025
most citedNovel Jeff = 1/2 Mott State Induced by Relativistic Spin-Orbit Coupling in Sr2IrO4

1.6k citations · 11.5k across the 139 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

21 papers · 1 filter

cond-mat.mes-hall2023

Discovery of interlayer plasmon polaron in graphene/WS heterostructures

Søren Ulstrup, Yann in 't Veld, Jill A. Miwa +11

Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations…

cond-mat.mes-hall2022★ 6 cited

Nanoscale view of engineered massive Dirac quasiparticles in lithographic superstructures

Alfred J. H. Jones, Lene Gammelgaard, Mikkel O. Sauer +13

Massive Dirac fermions are low-energy electronic excitations characterized by a hyperbolic band dispersion. They play a central role in several emerging physical phenomena such as…

cond-mat.mes-hall2022

Visualization of Strain-Induced Landau Levels in a Graphene - Black Phosphorus Heterostructure

Thi-Hai-Yen Vu, Pin Lyu, Na Hyun Jo +8

Strain-induced pseudo magnetic fields offer the possibility of realizing zero magnetic field Quantum Hall effect in graphene, possibly up to room temperature, representing a promis…

cond-mat.mes-hall2021★ 20 cited

Correlation-Driven Electron-Hole Asymmetry in Graphene Field Effect Devices

Nicholas Dale, Ryo Mori, M. Iqbal Bakti Utama +13

Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of e…

cond-mat.mes-hall2021★ 17 cited

Spatiotemporal Imaging of Thickness-Induced Band Bending Junctions

Joeson Wong, Artur R. Davoyan, Bolin Liao +8

Van der Waals materials exhibit naturally passivated surfaces and can form versatile heterostructures, enabling observation of carrier transport mechanisms not seen in three-dimens…

cond-mat.mes-hall2020★ 36 cited

Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe

B. K. Choi, S. Ulstrup, S. M. Gunasekera +12

Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H se…