409 citations · 1.9k across the 26 of their papers we have counts for
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cond-mat.mes-hall2017★ 1 cited
Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices
Feng Zhang, Sergiy Krylyuk, Huairuo Zhang +5
Over the past years, transition metal dichalcogenides (TMDs) have attracted attention as potential building blocks for various electronic applications due to their atomically thin…
cond-mat.mes-hall2017★ 92 cited
Understanding contact gating in Schottky barrier transistors from 2D channels
Abhijith Prakash, Hesameddin Ilatikhameneh, Peng Wu +1
In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials.…