25 citations · 66 across the 11 of their papers we have counts for
4 papers · 1 filter
On the possibility of level broadening in a quantum dot due to electrostatic interaction with a gate electrode
K. M. Indlekofer
In this article, we consider a quantum dot system which is interacting with a spatially separated metallic gate electrode via direct Coulomb interaction. Here, the gate electrode i…
Recursive approach to the calculation of a many-body basis in discrete electronic nanosystems
K. M. Indlekofer, R. Németh
In this article, we describe a recursive method to construct a subset of relevant Slater-determinants for the use in many-body diagonalization schemes that will be employed in our…
Improved modeling of Coulomb effects in nanoscale Schottky-barrier FETs
Klaus Michael Indlekofer, Joachim Knoch, Joerg Appenzeller
We employ a novel multi-configurational self-consistent Green's function approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect transistors. This approach a…
Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures
K. M. Indlekofer, J. Knoch, J. Appenzeller
With the help of a multi-configurational Green's function approach we simulate single-electron Coulomb charging effects in gated ultimately scaled nanostructures which are beyond t…