Quantum kinetic description of Coulomb effects in one-dimensional nano-transistors

Abstract

In this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantum charging effects in nano-transistors, such as gated carbon nanotube and whisker devices and one-dimensional CMOS transistors. Single-electron charging effects arise naturally as a consequence of the Coulomb repulsion within the channel.

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Cited by in corpus (7)

• Nonequilibrium Green's functions approach to strongly correlated few-electron quantum dots
• Conductance of a quantum point contact based on spin-density-functional theory
• Improved modeling of Coulomb effects in nanoscale Schottky-barrier FETs
• Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures
• Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts
• First-principles study of electron transport in few-electron open quantum dots by the Hartree-Fock approach
• Spatially resolved THz response as a characterization concept for nanowire FETs