25 citations · 66 across the 11 of their papers we have counts for
8 papers · 1 filter
Spatially resolved THz response as a characterization concept for nanowire FETs
K. M. Indlekofer, R. Németh, J. Knoch
In this paper, we propose a THz probe technique to obtain spatially resolved information about the electronic spectra inside nanowire-based FETs. This spectroscopic approach employ…
On the Possibility of Using Semiconductor Nanocolumns for the Realization of Quantum Bits
K. M. Indlekofer, Th. Schäpers
We propose the use of quantum dots formed in a semiconductor nanocolumn for the realization of charge or spin based quantum bits. The radial carrier confinement is achieved by empl…
On the possibility of level broadening in a quantum dot due to electrostatic interaction with a gate electrode
K. M. Indlekofer
In this article, we consider a quantum dot system which is interacting with a spatially separated metallic gate electrode via direct Coulomb interaction. Here, the gate electrode i…
Recursive approach to the calculation of a many-body basis in discrete electronic nanosystems
K. M. Indlekofer, R. Németh
In this article, we describe a recursive method to construct a subset of relevant Slater-determinants for the use in many-body diagonalization schemes that will be employed in our…
Improved modeling of Coulomb effects in nanoscale Schottky-barrier FETs
Klaus Michael Indlekofer, Joachim Knoch, Joerg Appenzeller
We employ a novel multi-configurational self-consistent Green's function approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect transistors. This approach a…
Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures
K. M. Indlekofer, J. Knoch, J. Appenzeller
With the help of a multi-configurational Green's function approach we simulate single-electron Coulomb charging effects in gated ultimately scaled nanostructures which are beyond t…