17 papers
Depth-Resolved Lattice Distortions in a Silicon-Germanium Qubit Host
Jonathan C. Marcks, E. S. Joseph, J. Reily +6
The authors use X‑ray nano‑structural mapping to resolve lattice distortions and strain in a Si/SiGe chip used for quantum dot qubits, revealing how growth‑induced defects propagat…
Complete measurement of tunnel- and valley-coupling parameters in a silicon double quantum dot
Daniel J. King, Minyoung Kim, J. Reily +4
Tunneling is essential in the initialization, measurement, and control of quantum dot qubits. In silicon, such tunneling connects not only the qubit states but also valley minima i…
High-fidelity EDSR in Si/SiGe Wiggle Wells
Hudaiba Soomro, Minyoung Kim, Avani Vivrekar +3
Si/SiGe quantum wells that incorporate Ge concentration oscillations, known as long-period Wiggle Wells, have been shown to enhance the Dresselhaus spin-orbit coupling of conductio…
Individually tunable Si/SiGe quantum dot operating voltages via gate-biased illumination
Jared Benson, Sanghyeok Park, Owen M. Eskandari +6
Semiconductor quantum dot qubits often require very different voltages on each gate to bring them to a correct operating point. Here, we present a method by which one can controlla…
Using a spin-triplet encoding to enhance shuttling fidelities in Si/SiGe quantum wells
Merritt P. R. Losert, S. N. Coppersmith, Mark Friesen
Spatial variations of the valley splitting in a quantum well present a key challenge for conveyor-mode shuttling of electron spins in Si/SiGe, giving rise to Landau-Zener-like exci…
Large quantum dot energy level shifts in anomalous photon-assisted tunneling
Jared Benson, C. E. Sturner, A. R. Huffman +12
Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. Howev…