From the 1 of 5 linked papers with an AI index.
5 papers
Depth-Resolved Lattice Distortions in a Silicon-Germanium Qubit Host
Jonathan C. Marcks, E. S. Joseph, J. Reily +6
The authors use X‑ray nano‑structural mapping to resolve lattice distortions and strain in a Si/SiGe chip used for quantum dot qubits, revealing how growth‑induced defects propagat…
Direct measurement of the energy spectrum of a quantum dot qubit
J. Reily, Daniel J. King, Jonathan C. Marcks +8
The mapping between gate voltages applied to a double quantum dot, and the parameters of a Hubbard-like Hamiltonian, is of utmost importance for understanding and operating spin qu…
A scanning probe microscopy approach for identifying defects in aluminum oxide
Leah Tom, Zachary J. Krebs, Joel B. Varley +8
The coherence of quantum dot qubits fabricated in semiconductors is often limited by charge noise from defects in gate dielectrics, which are material- and process-dependent. Chara…
Reducing strain fluctuations in quantum dot devices by gate-layer stacking
Collin C. D. Frink, Talise Oh, E. S. Joseph +5
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced p…
Non-equilibrium Dynamics of Two-level Systems directly after Cryogenic Alternating Bias
V. Iaia, E. S. Joseph, S. Im +10
Two-level systems (TLSs) are tunneling states commonly found in amorphous materials that electrically couple to qubits, resonators, and vibrational modes in materials, leading to e…