Vladimir P. Dubkov

most citedEvolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation

1 citations · 1 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2022★ 1 cited

Evolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation

Larisa V. Arapkina, Kirill V. Chizh, Vladimir P. Dubkov +2

The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with different surface relief are presented. Process of the partial stress relaxatio…

cond-mat.mtrl-sci2021

Influence of the thickness of Si and Ge films deposited on Si $_{3}$ N $_{4}$ /SiO $_{2}$ /Si substrates on their structure and diffusion of hydrogen atoms from Si $_{3}$ N $_{4}$ layers

Larisa V. Arapkina, Kirill V. Chizh, Dmitry B. Stavrovskii +5

The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si $_{3}$ N $_{4}$ /SiO $_{2}$ /…

Evolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation

Influence of the thickness of Si and Ge films deposited on Si3​N4​/SiO2​/Si substrates on their structure and diffusion of hydrogen atoms from Si3​N4​ layers

Influence of the thickness of Si and Ge films deposited on Si $_{3}$ N $_{4}$ /SiO $_{2}$ /Si substrates on their structure and diffusion of hydrogen atoms from Si $_{3}$ N $_{4}$ layers