92 citations · 165 across the 3 of their papers we have counts for
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cond-mat.other2007
Monte Carlo study of apparent mobility reduction in nano-MOSFETs
K. Huet, J. Saint-Martin, A. Bournel +4
The concept of mobility is discussed in the case of unstrained and strained nanoscale DG MOSFET thanks to particle Monte Carlo device simulation. Without the introduction of specif…
cond-mat.other2005★ 5 cited
Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation
J. Saint-Martin, A. Bournel, P. Dollfus
Multiple-gate SOI MOSFETs with gate length equal to 25 nm are compared using device Monte Carlo simulation. In such architectures, the short channel effects may be controlled with…