106 citations · 520 across the 14 of their papers we have counts for
14 papers
Quenching statistics in Si and Ge SPADs using particle Monte Carlo simulation
Philippe Dollfus, Jérôme Saint-Martin, Rémi Helleboid +5
Si- and Ge-based single-photon-avalanche-diodes (SPAD) are investigated by using self-consistent 3D Monte Carlo simulation, in a mixed-mode approach including the presence of a pas…
Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction
Jiaqi Zhou, Junfeng Qiao, Chun-Gang Duan +3
Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the…
Intrinsic Spin Hall Conductivity of MoTe2 and WTe2 Semimetals
Jiaqi Zhou, Junfeng Qiao, Arnaud Bournel +1
We report a comprehensive study on the intrinsic spin Hall conductivity (SHC) of semimetals MoTe2 and WTe2 by ab initio calculation. Large SHC and desirable spin Hall angles have b…
Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction
Jiaqi Zhou, Weisheng Zhao, Kaihua Cao +3
Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel jun…
A gate-variable spin current demultiplexer based on graphene
Li Su, Xiaoyang Lin, Youguang Zhang +5
Spintronics, which utilizes spin as information carrier, is a promising solution for nonvolatile memory and low-power computing in the post-Moore era. An important challenge is to…
Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions
Jiaqi Zhou, Weisheng Zhao, Yin Wang +8
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tun…