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most citedElectronic Structure of Pyrochlore Iridates: From Topological Dirac Metal to Mott Insulator

4.7k citations · 12.9k across the 125 of their papers we have counts for

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Showing 2016 · cond-mat.mtrl-sciShow all

8 papers · 2 filters

cond-mat.mtrl-sci2016★ 12 cited

Temperature effect on lattice and electronic structures of WTe from first-principles study

Gang Liu, Huimei Liu, Jian Zhou +1

Tungsten ditelluride (WTe) exhibits extremely large and unsaturated magnetoresistance (MR). Due to the large spatially extensions of Te-5p and W-5d orbitals, the electronic pro…

cond-mat.mtrl-sci2016★ 8 cited

La1-xBi1+xS3 (x~0.08): An n-Type Semiconductor

Fei Han, Huimei Liu, Christos D. Malliakas +4

The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic space group C2/m with a = 28.0447(19) Å, b = 4.0722(2) Å, c = 14.7350(9) Å, and = 118.493(5)°. The st…

cond-mat.mtrl-sci2016★ 12 cited

(CaO)(FeSe): A Layered Wide Gap Oxychalcogenide Semiconductor

Fei Han, Di Wang, Christos D. Malliakas +4

A new iron-oxychalcogenide (CaO)(FeSe) was obtained which crystallizes in the orthorhombic space group Pnma (No. 62) with a = 5.9180(12) Å, b = 3.8802(8) Å, c = 13.193(3) Å. The un…

cond-mat.mtrl-sci2016★ 7 cited

Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2Te3

Wen-Kai Huang, Kai-Wen Zhang, Chao-Long Yang +5

Heteroepitaxial structures based on BiTe-type topological insulators (TIs) exhibit exotic quantum phenomena. For optimal characterization of these phenomena, it is desi…

cond-mat.mtrl-sci2016★ 124 cited

CaTe: a new topological node-line and Dirac semimetal

Yongping Du, Feng Tang, Di Wang +5

Topological semimetals recently stimulate intense research activities. Combining first-principles calculations and effective model analysis, we predict that CaTe is topological nod…

cond-mat.mtrl-sci2016★ 643 cited

Concepts of Ferrovalley Material and Anomalous Valley Hall Effect

Wen-Yi Tong, Shi-Jing Gong, Xiangang Wan +1

Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electroni…