6 papers · 1 filter
Electronic structure and defect properties of Bi-doped GaN: origins of photoluminescence and optical absorption
Yujie Liu, Ishtiaque Ahmed Navid, Zetian Mi +1
Extreme lattice-mismatched III-V nitrides, such as Bi-incorporated GaN, have been realized experimentally thanks to recent advances in epitaxial growth and characterization techniq…
Selective incorporation of antimony into gallium nitride
Yujie Liu, Ishtiaque Ahmed Navid, Zetian Mi +1
Dilute concentrations of antimony (Sb) incorporation into GaN induce strong band-gap bowing and tunable room-temperature photoluminescence from the UV to the green spectral regions…
Unprecedented Enhancement of Piezoelectricity in Wurtzite Nitride Semiconductors via Thermal Annealing
Shubham Mondal, Md Mehedi Hasan Tanim, Garrett Baucom +9
The incorporation of rare-earth elements in wurtzite nitride semiconductors, e.g., scandium alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses…
Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires
Ding Wang, Ping Wang, Shubham Mondal +5
The pursuit of extreme device miniaturization and the exploration of novel physical phenomena have spurred significant interest in crystallographic phase control and ferroelectric…
Rethinking Polarization in Wurtzite Semiconductors
Ding Wang, Danhao Wang, Samuel Yang +1
Polarization arising from non-centrosymmetric wurtzite lattice underpins the physics and functionality of gallium nitride (GaN)-the most produced semiconductor materials second onl…
Electric-Field-Induced Domain Walls in Wurtzite Ferroelectrics
Ding Wang, Danhao Wang, Mahlet Molla +8
Wurtzite ferroelectrics possess transformative potential for next-generation microelectronics. A comprehensive understanding of their ferroelectric properties and domain energetics…