Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $\alpha$-(AlGa)${}_2$O${}_3$ on m-plane sapphire

Riena Jinno, Celesta S. Chang, Takeyoshi Onuma +9

Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semico…