386 citations · 1.7k across the 26 of their papers we have counts for
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Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates
Shivali Agrawal, Len van Deurzen, Jimy Encomendero +7
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Curr…
Accumulation and removal of Si impurities on arising from ambient air exposure
J. P. McCandless, C. A. Gorsak, V. Protasenko +5
Here we report that the source of Si impurities commonly observed on (010) is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment…
Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics
Jimy Encomendero, Vladimir Protasenko, Farhan Rana +2
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applicati…
Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV -(AlGa)O on m-plane sapphire
Riena Jinno, Celesta S. Chang, Takeyoshi Onuma +9
Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semico…