From the 1 of 4 linked papers with an AI index.
4 papers
Temperature-doping phase diagram and endurance in Ce-doped HfO2
Amit Kumar Shah, Haidong Lu, Kawshan Hathurusingha +2
The paper studies how adding cerium to ultrathin HfO2 films changes their crystal phases, ferroelectric polarization, and cycling endurance, establishing a temperature‑doping phase…
Atom Probe Tomography as an Emerging Tool for Understanding Defect-driven Mechanisms in HfO-based Ferroelectrics
Kasper A. Hunnestad, Catherine Dubourdieu, Alexei Gruverman +1
HfO-based ferroelectrics are essential for the next generation of CMOS-compatible memory and logic devices, yet their performance is governed by a complex interplay between o…
Antiferroelectric Hafnia Down to the 2D Limit
Xin Li, Guodong Ren, Haidong Lu +16
Antiferroelectricity is a material property characterized by alternating electric dipoles spontaneously ordered in antiparallel directions. Antiferroelectrics are promising for ene…
Improper Ferroelectricity at the Monolayer Limit
Yilin Evan Li, Harikrishnan KP, Haidong Lu +20
Ultrathin ferroelectric films with out-of-plane polarization and high Curie temperatures are key to miniaturizing electronic devices. Most ferroelectrics employed in devices are pr…